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Seminar on "Computational Study of Electro-thermal Management in Next Generation Interconnect Materials" 
Thursday, 09 August 2012,  3:00 -  4:30
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Quest is on for novel materials--- at the nanoscale--- with exotic electronic and thermal properties that can replace the existing ones and emerge as building blocks for the next generation electronic devices. This talk will reflect on some of the recent problems and their solutions in nanoscale electro-thermal management issues. Specifically, I will talk about the Joule-Heating phenomena in interconnects of next generation nanowires (considering metallic carbon nanotubes and graphene), for example, what is wrong with Copper/Aluminum, why the general solution of heat equation is required, the potential to resist electro-migration phenomena in metallic carbon nanotubes and graphene and the electrical and thermal resistances with the required detailing of the underlying physics and its solutions.

Apart from this, I will also talk on few of my allied research works on the nanoscale thermoelectric solid state devices that convert thermal energy to electrical energy and vice-versa without having any moving parts. I will reflect on the solutions, from my research works and available literature, for improving the efficiency of the material and devices from the theoretical point of view. Further, I will also talk on the Tunnel Field Effect transistors for achieving better sub-threshold transistor conditions and Silicon nanowires and the effect of strain on it, which primarily modifies the energy band gap and effective masses for procurement of better carrier mobility for faster processing transistors at room temperature.

Location Conference Hall, C-MMACS New Bldg.
Contact Krishna Mohan
Speaker: Sitangshu Bhattacharya,,Nanoscale Device Research Laboratory, Department of Electronic Systems and Engineering (Formerly Centre for Electronics Design and Technology), Indian Institute of Science, Bangalore


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